Detection and generation of THz radiation by plasma waves in nanometric two-dimensional systems
Université Montpellier II
 Actualité :
International GDR Project: « Semiconductor sources and detectors of THz frequencies»
Paris, 25 mars 2004
Les nano transistors, des flûtes à électrons

"Une équipe de chercheurs du CNRS dirigée par Wojciek Knap(1), vient de mettre en évidence l'émission de radiations infrarouges, les radiations Terahertz, par un nano transistor. Ils vérifient ainsi une théorie selon laquelle un nano transistor peut se décrire comme une flûte à électrons. Ces radiations représentent une source nouvelle pour l'imagerie médicale et industrielle." See more

may 2004
French team devises nano device to generate terahertz radiation

"The creation of a nanotransistor that generates a terahertz signal by means of plasma waves was reported by researchers in France in the 29 March issue of Applied Physics Letters. Such devices could fill a gap between 0.3 and 3 terahertz, for which no compact solid-state sources are available, says Wojciech Knap of the University of Montpellier, leader of the multinational team that published the report." "Terahertz Transistor," by Alexander Hellemans

General information concerning the research networks «Semiconductor sources and detectors of THz frequencies»

  GDR 2987 «Semiconductor sources and detectors of THz frequencies» was created in 2005 and had in its initial form 22 participants from France and abroad, from universities, different research organizations and industry. GDR has been created to promote the organization of scientific meetings and bilateral exchanges but hitherto has no formal agreement including well defined intellectual property rights. It is likely that such an agreement will be sent to all participants at the beginning of 2007.

  The creation of a European GDR (GDR-E) was one of the objectives of GDR since the very beginning. It was apparent after the first GDR meeting that some specific collaborations with well defined research subjects between some French laboratories and laboratories in Lithuania , Poland and Russia could be proposed. To allow the possibility and support of such international THz research actions, CNRS-DRI proposed the GDR-E agreement (with well defined intellectual property rights) between a very limited number of teams. At the same time the standard GDR-E agreement was modified to facilitate a rapid integration of new members/partners.

  The signing procedure of GDR-E commenced in July 2006 and was completed by the end of November 2006. The first scientific committee meeting was held on December the 4th. On December the 4th, 2007, in Moscow, has began the signature proceeding of the Amendment to Agreement concerning the adhesion of new participants to GDR-E.

  Both THZ GDR2987 and GDR-E continued to help in national and international scientific exchange and promote THz related basic research as well as technological/application driven programmes related to THz technology.

The GDRE has been renewed for a period of 4 years from January, 1st 2010 and has been renamed as «International Research Network (GDRI)». In the constitutive Agreement Annexes 1 (Research project description), 2 (Composition of the GDRE), 3 (Coordinators) and 4 (Budget) have been updated.

Events of the research networks «Semiconductor sources and detectors of THz frequencies»

GDR-E Workshop, 16-17 November,   2009,   Montpellier, France
GDR-E Workshop, 25-26 September,   2008,   Paris, France
Signing ceremony of Amendment in French Embassy in Moscow, 4 December,   2007,   Moscow, Russia
Meeting of the Steering Committee, 4 June,   2007,   Paris, France
GDR-E Workshop, 1-2 June,   2007,   Bombannes, France
GDR-E Scientific Committee Meeting, 4 December, 2006, Montpeller
Journées couplées GDR Ondes & GDR THz,5-6 Decembre 2006, Montpellier
The 2nd meeting, 9 May, 2006, Paris
The 1rst meeting,27-28 Juin, 2005, Montpeller